Senin, 28 September 2009

spring technology

Master high-tech capabilities is an absolute condition for a country to enter the newly industrialized countries. One of the high technology that greatly influenced human civilization in this century is the semiconductor and microelectronics technology. This field is usually analogous to the three words of English modern life is affecting Computer, Component, and communication. For computers, the main topic in this field is how to make computers become faster, more slender with more complex functions and power consumption decrease. For this purpose, there are two mutually supportive approaches in terms of hardware and software. In terms of hardware is how to make a transistor as the smallest active component becomes smaller and high speed. In terms of software is how to design an integrated circuit (integrated circuit) which becomes increasingly more complex slim and compact. The caption under the approach discussed in terms of the development of hardware devices-electron devices (electron devices) now and that will come as a basic component of semiconductor equipment / electronics, with views from the point of semiconductor material itself.

Discussion of the semiconductor devices must not be separated from the semiconductor material itself as the basic materials such device manufacturing. Silicon (Si) with an abundant supply on earth and with the crystal manufacturing technology established, has become the choice of semiconductor technology. Silicon very large scale integration (VLSI) has opened a new era in the world of electronics in the 20th century this. The need for higher speed and performance are better than computer technology has led to a silicon VLSI silicon ultra high scale integration (ULSI). Currently metaloxide semiconductor field effect transistors (MOSFETs) is still dominant as the technology base devices integrated circuit (IC). Dimensions of the MOSFETs become smaller and will be approximately 0.1 microns to the size of giga-bit dynamic random acces memories (DRAMs). Some of the problems that arise in an attempt reduce the dimensions of MOSFETs including short-channel effects and hot carrier that will reduce the performance of the transistor itself.


Despite much progress, the question that always arises is how far the limit of reduction that can be done in terms of production processes, physical properties of the device itself and interkoneksinya. Many problems in terms of fabrication which can become an obstacle. As one example of the limitations of the production process is the technique of lithography techniques necessary to realize the circuit design to the plate (Waver) silicon in IC fabrication process. By using light as a source file, the dimensions of lithography by itself will be limited by the wavelength of light itself. Therefore developed another lithography technique using X-rays and electron beams. By using these two techniques are not very economical for use in IC production process in bulk. From the above description, looks are still there are several problems that will arise in the IC fabrication process in the future.

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