Silicon-basd tecnology

As is known, in terms of elektronikanya structure, semiconductor materials can be divided into two types namely having a direct energy band gap (direct bandgap) and the energy band gap indirectly (indirect bandgap). Silicon is the material with energy gap is indirect, in which the value of the conduction band minimum and the maximum value of the valence band is not met at one price the same momentum. This meant that occur excitation and recombination of the charge brought great changes needed in the value of momentum. In other words, hard silicon emit light. This property causes the silicon is not fit for use as photonic devices / Optoelectronic, so that's possible for example to make IC contained therein Optoelectronic detector or a light source pemamcar using only the silicon material alone. Several attempts have been made to overcome this partly by developing what is known as bandgap engineering. One example is growing the material structure of SiGe / Si superlattice layer straitned. Parameters mechanical strains arising from the difference between the crystal lattice constant of SiGe and Si layers will affect the electronic structure of the material appearing on brillioun-zone effects that change the structure of folding the ribbon-like materials with direct energy gap (direct bandgap). The combination of these two materials allows the emission and absorption of light. Another way is also popular for improving optical properties of silicon is the so-called porous silicon material. With the electrochemical solution, the silicon plate can be shaped holes the size of tens of angstroms. With the help of a laser beam, will be seen with the naked eye from the light transmitting material is silicon. This phenomenon can be explained by using two-dimensional model of quantum confinement. The weakness of this technique is the nature of its reproducibility low. Advances over the opening of a new era for the silicon material and a guide to optoelektronika applied to the device.